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DATA SHEET
Compound Field Effect Power Transistor
PA1572B
N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE
DESCRIPTION
The PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver.
10
PACKAGE DIMENSIONS in millimeters
26.8 MAX. 4.0
FEATURES
* Full Mold Package with 4 Circuits * 4 V driving is possible * Low On-state Resistance RDS(on) = 0.6 MAX. (VGS = 10 V, ID = 1 A) RDS(on) = 0.8 MAX. (VGS = 4 V, ID = 1 A) * Low Input Capacitance Ciss = 110 pF TYP.
2.54 1.4 0.60.1
ORDERING INFORMATION
Type Number Package 10Pin SIP
3
1 2 3 4 5 6 7 8 910
PA1572BH
CONNECTION DIAGRAM
5 7 9
2 1
4
6
8 10
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (pulse) Total Power Dissipation Total Power Dissipation Channel Temperature Storage Tempreature Single Avalanche Current Single Avalanche Energy *1 PW 10 s, Duty Cycle 1 % *3 4 Circuits TA = 25 C VDSS VGSS (AC) ID (DS) ID (pulse) *1 PT1 *2 PT2 *3 TCH Tstg IAS *4 EAS *4 60 20 V V
ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source
2.0 A/unit 6.0 A/unit 20 3.0 W W
150 C -55 to +150C 5.0 0.1 A mJ
*2 4 Circuits TC = 25 C *4 Starting TCH = 25 C, VDD = 30 V, VGS = 20 V 0, RG = 25 , L = 100 H
Build-in Gate Diodes are for protection from static electricity in handing. In case high voltage over VGSs is applied, please append gate protection circuits.
The information in this document is subject to change without notice. Document No. G11177EJ1V0DS00 (1st edition) Date Published May 1996 P Printed in Japan
(c)
10 MIN.
2.5
1.4 0.50.1
1996
PA1572B
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain Leakage Current Gate Leakage Current Gate Cutoff Voltage Forward Transfer Admittance Drain to Source ON-Resistance Drain to Sourse ON-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS (off) Yfs RDS (on)1 RDS (on)2 Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1.0 0.5 0.3 0.4 110 70 25 30 200 100 160 5.4 0.7 2.0 1.0 130 110 0.6 0.8 MIN. TYP. MAX. 10 10 2.0 UNIT TEST CONDITION VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VGS = 4.0 V, ID = 1.0 A VDS = 10 V, VGS = 0, f = 1.0 MHz
A A
V S pF pF pF ns ns ns ns nC nC nC V ns nC
ID = 1.0 A, VGS (on) = 10 V, VDD = 30 V, RL = 30
VGS = 10 V, ID = 2.0 A, VDD = 48 V
IF = 2.0 A, VGS = 0 IF = 2.0 A, VGS = 0, di/dt = 50 A/s
2
PA1572B
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG. VGS = 20 V 0 50 L
VDD
BVDSS IAS ID VDD VDS
Starting TCH
Test Circuit 2 Switching Time
D.U.T. RL VGS PG. RG RG = 10
Wave From
VGS 0 ID ID 0 10 % td (on) tr ton 10 % 90 % VGS (on)
90 %
VDD
90 % ID td (off) toff 10 % tr
VGS 0 t t = 1 s Duty Cycle 1 %
Wave From
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50 RL
VDD
3
PA1572B
CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.5 PT - Total Power Dissipation - W 3.0 2.5 2.0 1.5 Under Same dissipation in each circuit 4 Circuits operation 3 Circuits operation 2 Circuits operation 1 Circuit operation
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Tc is grease Temperature on back surface Under Same dissipation in each circuit 4 Circuits operation 20 3 Circuits operation 2 Circuits operation 10 1 Circuit operation
PT - Total Power Dissipation - W
30
1.0 0.5 0
,,
NEC 10 1.0
R
( DS on )L
PA1572BH Lead
Print Circuit Boad 100 150
50
0
50
100
150
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA
0 =1
TC - Case Temperature - C DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 100
V)
ID(Pulse) ID(DC)
ID - Drain Current - A
im
ite
d(
V
G
S
0. 1 0. ms 5m 10 m s 1m s s 50 m s DC
100 80 60 40 20
0.1
0.01 0.1
TC = 25 C Single Pulse 1.0 10
0
20
40
60
80
100 120 140 160
VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS=10V ID - Drain Current - A ID - Drain Current - A 10 8
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
6 VGS=20V 10V 4 VGS=4V 2
1.0
TA=125 C 75 C 25 C -25 C
0.1
0
2
4
6
0
1
2
3
VGS- Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
4
PA1572B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 000
rth(t) - Transient Thermal Resistance - C/W
1 000
100
Rth (CH-A) 4Circuits 3Circuits 2Circuits 1Circuit
10
1.0 For Each Circuit, Single Pulse 0.1 100 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s
10 VDS=10V Pulsed TA=-25C 25C 75C 125C 1.0
RDS(on) - Drain to Source On-State Resistance -
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
yfs - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed
1.0
ID= 2 A 1A 0.4 A
0.5
0.1 0.01
0.1
1.0
10
0
10 VGS - Gate to Source Voltage - V
20
ID- Drain Current - A
RDS(on) - Drain to Source On-State Resistance -
2.0 Pulsed
VGS(off) - Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2 VDS = 10 V ID = 1 mA
1.0
1
VGS=4V VGS=10V 0
0.1
1.0
10
0 - 50
0
50
100
150
ID - Drain Current - A
TCH - Channel Temperature - C
5
PA1572B
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.8
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10
0.6
VGS=4V
ISD - Diode Forward Current - A
Pulsed
VGS=2V 1.0
0.4 VGS=10V 0.2 ID = 1A 0 50 100 150
0.1
VGS=0
0 - 50
0
0.5
1.0
1.5
TCH - Channel Temperature -C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000
VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
td(off) 100 tf tr
100
Ciss Coss Crss
10
10
td(on) VDD =30V VGS =10V RG =10 1.0 ID - Drain Current - A 10
1.0 0.1
1
10
100
1.0 0.1
VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 ID=2A 60 VDD=12V 30V 48V 40 VGS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
12 10 8 6
100
20 VDS 0 2 4 6 8
4 2 0
10 0.1
1.0 ID - Drain Current - A
10
QG - Gate Charge - nC
6
VGS - Gate to Source Voltage - V
di/dt =50A/ s VGS = 0
14
PA1572B
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10 100
SINGLE AVALANCHE ENERGY DERATING FACTOR
IAS - Single Avalanche Current - A
Energy Derating Factor - %
80 60
1.0
IAS=1A
EAS =0. 1m J
VDD = 30 V RG = 25 VGS = 20 V 0 IAS 1.0A
40
0.1 VDD = 30 V VGS = 20 V 0 RG = 25 Starting TCH=25C 10 100 1m 10 m
20 0 25
0.1
50
75
100
125
150
L - Inductive Load - H
Starting TCH - Starting Channel Temperature - C
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
7
PA1572B
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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